10G 1270nm DML LD  chip

WahE's 10G 1270nm directly modulated laser diode is designed for use in uncooled application at operating temperature of -25°C~85°.It is asingle mode edge emitting distributed feedback Bragggrating(DFB)laser based on the compact ridge waveguide design with AlGalnAs active layers growing on n-type substrate. The front and rear facets are coated with anti-reflectance/high-reflectance layers, respectively. The laser features low threshold,high output power,and low beam divergence angle.

WahE's 10G Laser Diodes with CWDM wavelengths of 

1511/1531/1551/1571nm are designed for use inuncooled application up to 15km links and 10.3Gbps data rate,at operating temperature of-25℃～85℃It is a single mode edge emitting distributed feedback Bragg grating (DFB) laser based on the compact ridge waveguide design with AIGalnAs active layers growing on ntype substrate.The front and rear facetsare coated wth ant-reflectance/high-reflectance layers. respectively. The laser feat-ures low threshold, highoutput power and optimized chirp performance during direct modulation.