WahE's 25G 1300nm directly modulated laser diode, adopted special epitaxial structure design, is designed for use in uncooled application of 50G-PON system at operating temperature of-25℃~85℃.It is a single mode edge-emitting distributed feedback Bragg grating (DFB)laser based on thecompact ridge waveguide design with AlGalnAs active layers growing on n-type substrate.

The frontrear facets are coated with anti-reflectance/high-refecta-

nce layers, respectvely. The laserfeatures highbandwidth,low threshold and high output power.

WahE's 25G1311/1331/135nm directly modulated aser diode,adopted specialepitaxial structure design, is designed for use in uncooled application at operating temperature of-25°℃~85°℃.

It is a single mode edge-emitting distributed feedback Bragg grating (DFB)laser based onhe compact ridge waveguide desi-gn with AlGalnAs active layers growing on n-type substrate.The front and rear facets are coated with anti-reflectance/high-refl-ectance layers, respectively. The aser features high bandwidth low threshold and high output power.